View MW7IC930NR110_3109312.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 1 rf device data freescale semiconductor rf ldmos wideband integrated power amplifiers the mw7ic930n wideband integrated circuit is designed with on--chip matching that makes it usable from 728 to 960 mhz. this multi--stage structure is rated for 24 to 32 volt operation and covers all typical cellular base station modulation. driver application ? 900 mhz ? typical single--carrier w--cdma performance: v dd =28volts,i dq1 = 106 ma, i dq2 = 285 ma, p out = 3.2 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency (1) g ps (db) pae (%) acpr (dbc) 920 mhz 36.6 16.1 --48.0 940 mhz 36.8 16.7 --48.7 960 mhz 36.6 17.3 --48.6 ? capable of handling 10:1 vswr, @ 32 vdc, 940 mhz, 48 watts cw output power (3 db input overdrive from rated p out ) ? stable into a 5:1 vswr. all spurs below --60 dbc @ 1 mw to 30 watts cw p out . ? typical p out @ 1 db compression point ? 31 watts cw, i dq1 =40ma, i dq2 = 340 ma driver application ? 700 mhz ? typical single--carrier w--cdma performance: v dd =28volts,i dq1 = 106 ma, i dq2 = 285 ma, p out = 3.2 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) pae (%) acpr (dbc) 728 mhz 36.4 16.1 --47.7 748 mhz 36.4 16.1 --47.8 768 mhz 36.4 16.0 --47.9 features ? characterized with series equivalent large--signal impedance parameters and commo n source s--parameters ? on--chip matching (50 ohm input, dc blocked, >5 ohm output) ? integrated quiescent current temperatur e compensation with enable/ disable function (2) ? integrated esd protection ? 225 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. document number: mw7ic930n rev. 1, 10/2010 freescale semiconductor technical data 728--768 mhz, 920--960 mhz, 3.2 w avg., 28 v single w--cdma rf ldmos wideband integrated power amplifiers mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 case 1886--01 to--270 wb--16 plastic mw7ic930nr1 case 1329--09 to--272 wb--16 plastic mw7ic930nbr1 case 1887--01 to--270 wb--16 gull plastic mw7ic930gnr1 (top view) gnd nc rf in v gs1 gnd rf out /v ds2 gnd 1 2 3 4 5 6 7 8 16 15 14 13 12 v gs2 9 10 gnd 11 quiescent current temperature compensation (2) v ds1 rf in v gs1 rf out /v ds2 v gs2 v ds1 nc nc nc nc note: exposed backside of the package is the source terminal for the transistors. figure 1. functional block diagram figure 2. pin connections gnd gnd 1. 900 mhz driver frequency band table data collected in the 900 mhz application test fixture. see fig. 7. 2. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf. select documentation/application notes -- an1977 or an1987. ? freescale semiconductor, inc., 2009--2010. a ll rights reserved.
2 rf device data freescale semiconductor mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c input power p in 20 dbm table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case (case temperature 80 c, 3.2 w cw) stage 1, 28 vdc, i dq1 = 106 ma stage 2, 28 vdc, i dq2 = 285 ma (case temperature 80 c, 30 w cw) stage 1, 28 vdc, i dq1 =40ma stage 2, 28 vdc, i dq2 = 340 ma r jc 5.5 1.6 5.8 1.2 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1b (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) ii (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit stage 1 ? off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 1 ? on characteristics gate threshold voltage (v ds =10vdc,i d =14 adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v ds =28vdc,i dq1 = 106 ma) v gs(q) ? 2.8 ? vdc fixture gate quiescent voltage (4) (v dd =28vdc,i dq1 = 106 ma, measured in functional test) v gg(q) 6.9 9.4 11.9 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. v gg =3.3xv gs(q) . parameter measured on freescale test fixture, due to resi stive divider network on the board. refer to test circuit schematic. (continued)
mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 3 rf device data freescale semiconductor table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit stage 2 ? off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 2 ? on characteristics gate threshold voltage (v ds =10vdc,i d =74 adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v ds =28vdc,i dq2 = 285 ma) v gs(q) ? 2.6 ? vdc fixture gate quiescent voltage (1) (v dd =28vdc,i dq2 = 285 ma, measured in functional test) v gg(q) 4.2 5.9 7.6 vdc drain--source on--voltage (v gs =10vdc,i d = 740 ma) v ds(on) 0.1 0.3 0.8 vdc functional tests (2,3) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1 = 106 ma, i dq2 = 285 ma, p out = 3.2 w avg., f = 940 mhz, single--carrier w--cdma, 3.84 mhz channel bandwidth carrier, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 33 35.9 38 db power added efficiency pae 14 16.5 ? % adjacent channel power ratio acpr ? --49.5 -- 4 6 dbc input return loss irl ? --18.7 -- 9 db typical broadband performance ? 900 mhz (in freescale 900 mhz application test fixture, 50 ohm system) v dd =28vdc,i dq1 = 106 ma, i dq2 = 285 ma, p out = 3.2 w avg., single--carrier w--cdma, iq magnit ude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) pae (%) acpr (dbc) irl (db) 920 mhz 36.6 16.1 --48.0 --19.9 940 mhz 36.8 16.7 --48.7 --20.8 960 mhz 36.6 17.3 --48.6 --19.7 1. v gg =2.25xv gs(q) . parameter measured on freescale test fixture, due to resi stive divider network on the board. refer to test circuit schematic. 2. part internally matched both on input and output. 3. measurement made with device in str aight lead configuration before any lead forming operation is applied. (continued)
4 rf device data freescale semiconductor mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performance ? 900 mhz (in freescale 900 mhz application test fixture, 50 ohm system) v dd =28vdc,i dq1 = 106 ma, i dq2 = 285 ma, 920--960 mhz bandwidth v dd =28vdc,i dq1 =40ma,i dq2 = 340 ma p out @ 1 db compression point, cw p1db ? 31 ? w imd symmetry @ 25 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 45 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 80 ? mhz quiescent current accuracy over temperature (1) with3k ? gate feed resistors (--30 to 85 c) ? i qt ? 0.02 ? % gain flatness in 40 mhz bandwidth @ p out =3.2wavg. g f ? 0.2 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.036 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.01 ? dbm/ c typical w--cdma broadband performance ? 700 mhz (in freescale 700 mhz application test fixture, 50 ohm system) v dd =28vdc, i dq1 = 106 ma, i dq2 = 285 ma, p out = 3.2 w avg., single--carrier w--cdma, iq m agnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) pae (%) acpr (dbc) irl (db) 728 mhz 36.4 16.1 --47.7 --17.9 748 mhz 36.4 16.1 --47.8 --20.7 768 mhz 36.4 16.0 --47.9 --21.8 1. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf. select documentation/application notes -- an1977 or an1987.
mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 5 rf device data freescale semiconductor figure 3. mw7ic930nr1(gnr1)(nbr1) test circuit component layout ? 900 mhz mw7ic930n rev 2 cut out area r1 c1 c2 c3 c4 c5 c6 c7 c8 c10 c11 c12 c13 c14 c15 c16 c17 c18 c9 r2 r3 r4 r5 r6 v dd2 v dd1 v gg2 v gg1 r7 table 6. mw7ic930nr1(gnr1)(nbr1) test circuit com ponent designations and values ? 900 mhz part description part number manufacturer c1, c4, c7 47 pf chip capacitors atc600f470jt250xt atc c2, c5, c8 10 nf, 50 v chip capacitors c0603c103j5rac--tu kemet c3, c6 1 f, 50 v chip capacitors grm21br71h105ka12l murata c9, c15 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c10 16 pf chip capacitor atc100b160jt500xt atc c11 6.2 pf chip capacitor atc100b6r2bt500xt atc c12 7.5 pf chip capacitor atc100b7r5ct500xt atc c13, c14 47 pf chip capacitors atc100b470jt500xt atc c16, c17 100 f, 50 v electrolytic capacitors mcgpr35v337m10x16--rh multicomp c18 0.5 pf chip capacitor atc100b0r5bt500xt atc r1, r2, r3, r4, r5, r6 1000 ? , 1/4 w chip resistors crcw12061k00fkea vishay r7 0 ? , 3a chip resistor crcw12060000z0ea vishay pcb 0.020 , r =3.5 rf--35 taconic
6 rf device data freescale semiconductor mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 typical characteristics ? 900 mhz irl, input return loss (db) 800 irl g ps acpr f, frequency (mhz) figure 4. output peak--to--average ratio compression (parc) broadband performance @ p out = 3.2 watts avg. -- 2 6 -- 1 8 -- 2 0 -- 2 2 -- 2 4 33.5 38.5 38 37.5 -- 5 0 20 18 16 14 -- 4 0 -- 4 2 -- 4 4 -- 4 6 pae, power added efficiency (%) g ps , power gain (db) 37 36.5 36 35.5 35 34.5 34 825 850 875 900 925 950 975 1000 12 -- 4 8 -- 2 8 parc parc (db) -- 1 . 5 0.5 0 -- 0 . 5 -- 1 -- 2 acpr (dbc) figure 5. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 6 0 -- 1 0 -- 2 0 -- 3 0 -- 5 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im3--u im3--l im5--u im5--l im7--l im7--u v dd =28vdc,p out = 25 w (pep), i dq1 = 106 ma i dq2 = 285 ma, two--tone measurements (f1 + f2)/2 = center frequency of 940 mhz figure 6. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 5 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 2 814 10 46 40 34 28 22 16 pae, power added efficiency (%) 11 acpr acpr (dbc) -- 5 0 -- 2 6 -- 3 0 -- 3 4 -- 4 2 -- 3 8 -- 4 6 37.5 g ps , power gain (db) 37 36.5 36 35.5 35 34.5 g ps pae probabilit y on ccdf i dq2 = 285 ma, single--carrier w--cdma v dd =28vdc,p out =3.2w(avg.),i dq1 = 106 ma 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% pae --1 db = 6.41 w --2 db = 8.98 w --3 db = 12.17 w parc v dd =28vdc i dq1 = 106 ma i dq2 = 285 ma f = 940 mhz single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% probabilit y on ccdf
mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 7 rf device data freescale semiconductor typical characteristics ? 900 mhz 1 p out , output power (watts) avg. figure 7. single--carrier w--cdma power gain, power added efficiency and acpr versus output power -- 1 0 -- 2 0 33 38 0 60 54 48 42 36 pae, power added efficiency (%) g ps , power gain (db) 37.5 37 10 50 -- 5 0 acpr (dbc) 36.5 36 35.5 0 -- 3 0 -- 4 0 -- 4 5 figure 8. broadband frequency response 10 40 450 f, frequency (mhz) v dd =28vdc p in =--10dbm i dq1 = 106 ma i dq2 = 285 ma 30 25 20 550 gain (db) 35 gain 650 750 850 950 1050 1150 1250 irl -- 3 0 0 -- 5 -- 1 0 -- 1 5 -- 2 0 irl (db) 15 --25 -- 5 -- 1 5 -- 2 5 -- 3 5 35 34.5 35 33.5 34 acpr 960 mhz v dd =28vdc i dq1 = 106 ma, i dq2 = 285 ma single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probabilit y on ccdf pae 920 mhz 940 mhz 960 mhz 920 mhz 960 mhz 940 mhz 920 mhz g ps 30 24 18 12 6 w--cdma test signal 0.0001 100 0 peak--to--average (db) figure 9. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 7.5 db @ 0.01% probabilit y on ccdf input signal 10 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 10. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 13579
8 rf device data freescale semiconductor mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 v dd =28vdc,i dq1 = 106 ma, i dq2 = 285 ma, p out =3.2wavg. f mhz z in ? z load ? 820 37.95 + j2.31 4.70 + j0.98 840 39.95 + j2.72 4.29 + j1.23 860 42.70 + j1.02 3.93 + j1.67 880 44.40 -- j1.38 3.63 + j2.15 900 46.25 -- j4.92 3.41 + j2.61 920 45.70 -- j8.41 3.14 + j3.05 940 45.46 -- j11.47 2.94 + j3.48 960 45.07 -- j15.19 2.85 + j3.90 980 43.49 -- j18.03 2.69 + j4.32 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 11. series equivalent input and load impedance ? 900 mhz z in z load device under test output matching network
mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 9 rf device data freescale semiconductor alternative peak tune load pull characteristics ? 900 mhz 15 p in , input power (dbm) v dd =28 v dc, i dq1 = 106 ma, i dq2 = 285 ma, pulsed cw, 10 sec(on), 10% duty cycle 44 42 16 18 17 actual ideal 45 43 41 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 46 48 49 51 14 13 12 9 19 11 10 47 f = 960 mhz 50 f = 920 mhz f = 940 mhz f = 960 mhz f = 920 mhz f = 940 mhz f (mhz) p1db p3db watts dbm watts dbm 920 43 46.3 51 47.1 940 42 46.3 50 47 960 42 46.3 50 47 test impedances per compression level f (mhz) z source ? z load ? 920 p1db 55.82 + j15.71 4.54 + j1.15 940 p1db 52.56 + j20.20 4.38 + j1.21 960 p1db 49.18 + j25.00 5.04 + j1.15 figure 12. pulsed cw output power versus input power @ 28 v
10 rf device data freescale semiconductor mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 figure 13. mw7ic930nr1(gnr1)(nbr1) test circuit component layout ? 700 mhz cut out area r1 c1 c2 c3 c4 c5 c6 c7 c8 c10 c11 c12 c13 c14 c15 c16 c17 c18 c9 r2 r3 r4 r5 r6 v dd2 v dd1 v gg2 v gg1 r7 mw7ic930n rev 2 table 7. mw7ic930nr1(gnr1)(nbr1) test circuit component designations and values ? 700 mhz part description part number manufacturer c1, c4, c7 47 pf chip capacitors atc600f470jt250xt atc c2, c5, c8 10 nf, 50 v chip capacitors c0603c103j5rac kemet c3, c6 1 f, 50 v chip capacitors grm21br71h105ka12l murata c9, c15 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c10 13 pf chip capacitor atc100b130jt500xt atc c11 7.5 pf chip capacitor atc100b7r5ct500xt atc c12 6.8 pf chip capacitor atc100b6r8ct500xt atc c13, c14 47 pf chip capacitors atc100b470jt500xt atc c16, c17 100 f, 50 v electrolytic capacitors mcgpr35v337m10x16--rh multicomp c18 1.8 pf chip capacitor atc100b1r8bt500xt atc r1, r2, r3, r4, r5, r6 1000 ? , 1/4 w chip resistors crcw12061k00fkea vishay r7 0 ? , 3a chip resistor crcw12060000z0ea vishay pcb 0.020 , r =3.5 rf--35 taconic
mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 11 rf device data freescale semiconductor typical characteristics ? 700 mhz 1 p out , output power (watts) avg. figure 14. single--carrier w--cdma power gain, power added efficiency and acpr versus output power ? 700 mhz -- 1 0 -- 2 0 32.5 0 60 54 48 42 36 pae, power added efficiency (%) g ps , power gain (db) 37.5 37 10 50 18 -- 5 0 acpr (dbc) 36.5 36 35.5 0 -- 3 0 -- 4 0 -- 4 5 -- 5 -- 1 5 -- 2 5 -- 3 5 35 34.5 33.5 34 acpr v dd =28vdc i dq1 = 106 ma, i dq2 = 285 ma single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probabilit y on ccdf pae 728 mhz 748 mhz g ps 33 24 30 12 6 768 mhz 728 mhz 748 mhz 748 mhz 768 mhz 728 mhz v dd =28vdc,i dq1 = 106 ma, i dq2 = 285 ma, p out =3.2wavg. f mhz z in ? z load ? 710 25.21 -- j1.21 8.57 + j2.52 720 33.76 + j5.36 8.52 + j2.46 730 38.78 + j1.40 8.44 + j2.34 740 40.14 -- j0.76 8.36 + j2.16 750 35.46 -- j1.15 8.30 + j2.00 760 34.65 -- j0.53 8.32 + j1.90 770 34.75 -- j0.43 8.31 + j1.86 780 36.20 + j0.81 8.27 + j1.98 790 36.18 + j1.33 8.23 + j2.12 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 15. series equivalent input and load impedance ? 700 mhz z in z load device under test output matching network
12 rf device data freescale semiconductor mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 package dimensions
mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 13 rf device data freescale semiconductor
14 rf device data freescale semiconductor mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1
mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 15 rf device data freescale semiconductor
16 rf device data freescale semiconductor mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1
mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 17 rf device data freescale semiconductor
18 rf device data freescale semiconductor mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1
mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 19 rf device data freescale semiconductor
20 rf device data freescale semiconductor mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1
mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 21 rf device data freescale semiconductor product documentation and software refer to the following documents, tools and software to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family ? an3263: bolt down mounting method for high power rf transistors and rfics in over--molded plastic packages ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software, do a part number search at http://www.freescale.c om, and select the ?part num ber? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 aug. 2009 ? initial release of data sheet 1 oct. 2010 ? table 1, maximum ratings, increased input power from 4.7 dbm to 20 dbm to reflect the true capability of the device, p. 2
22 rf device data freescale semiconductor mw7ic930nr1 mw7ic930gnr1 mw7ic930nbr1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2009--2010. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mw7ic930n rev. 1, 10/2010

▲Up To Search▲

Price & Availability of MW7IC930NR110

	To Download MW7IC930NR110 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .